5, −1.0, −1.5, and −2.0 mA/cm2 simply indicated the growth of vertically aligned ZnO rods along the c-axis. Meanwhile,

the relatively high peaks corresponding to the ZnO (010) and (011) planes observed in those samples indicated the formation of vertically non-aligned rods and flower-shaped structures. These results are consistent with the SEM images shown in Figure 2. However, the observed weak peaks of the ZnO (002), (010), and (011) planes, particularly for the sample grown at a current density of −0.1 mA/cm2, justified the less formation of vertically aligned/non-aligned rods as well as flower-shaped structures. Figure 3 XRD and PL spectra. (a) XRD spectra and (b) RT PL spectra of grown ZnO structures at different applied current

densities. Figure 3b shows the RT PL spectra of ZnO structures grown at different current densities. Here, two Selleck AZD8931 distinct emission bands were observed. The first band located in the UV region was estimated to be AZD2171 cost around 379, 385, 392, 395, and 389 nm for samples at current densities of −0.1, −0.5, −1.0, −1.5, and −2.0 mA/cm2, respectively. This band is claimed to be due to the near-band edge (NBE) emission or the recombinations of free excitons through an exciton-exciton collision process [6, 29]. The second band appears in the green region of the visible spectrum at approximately 576, 574, 569, 563, and 569 nm, respectively. This band is commonly referred to as a deep-level or trap-state emission. Some researchers suggested that it could be attributed to the recombination of photogenerated holes with single ionized charge states of specific defects such LY3023414 cell line as O vacancies or Zn interstitials [6, 31, 35]. However, Kang et al. reported

that the singly ionized oxygen vacancy is responsible for the green emission and not the ionized Zn interstitials [36]. O-methylated flavonoid It is needed to be proved by post-annealing process of samples. Besides, the intensity of the peak also indicates the level of defects in the samples [31]. Surface state has also been identified as a possible cause of the visible emission in ZnO nanomaterials [37]. There are several reports discussing the relationship of these emission peaks with the quality of the grown structures. As been reported by Djurišić and Leung, the intensity of UV emission is dependent on the nanostructure size [38]. Below a certain size, the luminescence properties of the ZnO nanostructure should be dominated by the properties of the surface. The samples grown at current densities of −0.5 and −1.0 mA/cm2 show highly intense UV emission with the highest aspect ratio (Table 1) compared to other samples. Highly intense UV emission seems to show higher crystallinity and more perfection in surface states as reported by Park et al. [39]. Chen et al. suggested that it may imply a good crystal surface [40]. The enhancement of UV emission is attributed to a larger surface area and fewer defects [41].