With these two selected etching gases, there is a chemical component (from the SiCl4) and a sputter component (mainly Ar). The resulting etching characteristic then depends on the gas mixture and selected powers. Chemical etching of GaAs in the direction is usually two to five times faster than in the perpendicular [0 1 1] direction, therefore increasing the effect of the separated holes. The hole occupation is given with respect to the aspect ratio in Figure 5. For both etching

times, the number of QDs per hole increases with increasing aspect ratio. learn more Compared to the results in Figure 2, this is a bit surprising because the number of QDs per hole decreases with decreasing aspect ratio although the hole diameter is strongly

increasing. Apparently, the tendency of higher occupation numbers for larger holes is influenced by the aspect ratio of the holes. Therefore, it is possible to decrease the occupation by using larger holes with Angiogenesis inhibitor smaller aspect ratios. Figure 5 Influence of the aspect ratio on the hole occupation. The influence of the occupation and diameter of the holes depending on the aspect ratio is given for 10 (a) and 15 s (b) of etching time. With this basic approach of two separated exposure spots, the diameter of the holes increases with decreasing aspect ratio. The advantage of a hole with smaller aspect ratio therefore comes with a disadvantage of a larger hole. Nevertheless, a smaller 4SC-202 price number of QDs per hole nucleate with decreasing aspect ratio but larger hole size. This can be seen for both etching times shown. Increasing the etching time leads to larger holes as Cyclic nucleotide phosphodiesterase seen before, but smaller aspect ratio and thus smaller occupation. At last, the influence of the etching depth is investigated. The etch rate depends strongly on the size of the etched structure, see Figure 3. At first, it increases very strongly with the hole area, which is due to

the supply shortage of the etching gases through the small hole size. With increasing size of the etched structure, this effect becomes negligible and the etch rate converges to the etch rate of a free surface. The largest structures show about an eight times higher etching rate than the smallest investigated structures, which has to be taken into account if structures with different sizes are etched at the same time. The influence of depth on the occupation is investigated next. The 20 s etched holes were too deep for SEM investigation, and therefore, AFM images were used for all samples in Figure 6. The distribution of occupation numbers is shown for three different etching times for an initially equal hole size inside the resist. Figure 6 Influence of depth on the amount of nucleating QDs per holes. In (a), the fraction of the number of QDs per hole nucleating inside a hole is given. With increasing etching duration and therefore depth, the number of QDs per hole decreases.