% of Si, respectively. Figure 4e shows results of thermal emission quenching at 488-nm excitation wavelength for a sample with 39 at.% Ruboxistaurin of Si. It can be seen that the Er3+-related emission is also characterized by two quenching energies equal to about 20 and 60 meV. These values are almost the same as for 266-nm excitation and very similar to VIS emission where values of 15 and 70 meV have been obtained. This indicates that in this case also, we deal with indirect excitation of Er3+ ions. Since 488 nm corresponds also to direct excitation of Er3+ ions, most probably, we deal with both kinds of excitation simultaneously. We believe, however, that indirect excitation is in this

case dominant. Nevertheless, the results obtained at this excitation wavelength for 37 at.% of Si are not so obvious. In this case, two statistically equal

fits with one (20 meV) and two energies (20 and 6 meV) were possible to achieve. The higher MRT67307 cost energy is clear and has the same origin as in the previous cases. One explanation of this fact would be the excitation spectrum for this sample where its edge is much shifted to blue as compared to samples with 39 at.% of Si. Thus, in this case, we can indeed observe a major contribution from a direct excitation of Er3+ ions rather than via intermediate states. Conclusions The existence of efficient excitation transfer from silicon nanoclusters to Er3+ ions has been shown for SRSO thin films deposited by ECR-PECVD

by means of PL, TRPL, PLE and temperature-dependent MM-102 concentration PL experiments. However, it has been shown that for our samples, this energy transfer is most efficient at high excitation energies. Epothilone B (EPO906, Patupilone) Much less efficient energy transfer has been observed at 488-nm excitation. In this case, depending on Si nanocluster size, we deal with dominant contribution to Er3+ excitation from indirect excitation channel (big nanoclusters) or from direct excitation of Er3+ ions (small nanoclusters). Moreover, it has been shown that a wide emission band in the VIS spectral range is a superposition of three emission sub-bands coming from spatially resolved objects with very different kinetics: a band at around 450 nm, with 20-ns decay, which is not changing with Si content and is related with optically active defect states and STE in SRSO matrix; a band at approximately 600 nm related to aSi-NCs with hundred-microsecond emission decay and strong dependence on Si content following the predictions of quantum confinement model; and a third band at around 800 nm (1.54 eV) (Si-NCs, defects) with either very fast (<3 ns) or very slow (>100 μs) emission kinetics, also depending on Si content. Additionally, it has been shown that two Er3+ sites are present in our samples: isolated ions and clustered ions with emission decay times of approximately 3 and <1 ms, respectively. Acknowledgments AP would like to acknowledge the financial support from the Iuventus Plus program (no. IP2011 042971).