In its basic configuration, the FET sensor is a field-effect transistor where the metal gate electrode is replaced by an ion-conducting solution and a reference electrode. This Electrolyte-Insulator-Semiconductor FET is commonly referred to as an EISFET. An inorganic dielectric material is used as the interface between the device and the solution, and its electrical response is sensitive to ion concentration in the solution [6-9]. This ion-sensitive field-effect transistor (ISFET) was first introduced by Bergveld in 1970 [10]. Eventually a membrane or other element can be added to the dielectric material to couple the biological components and to induce selectivity towards specific analytes [11]. Among various types of transducers used for biosensing, EISFET, along with its many inherent drawbacks is still one of the most investigated devices for electronic biosensing [12,13].

During the past 30 years, EISFET technology and applications have achieved a remarkable level of development [14]. FET-related devices have appeared with molecular selectivity (enzyme sensors [15], immunosensors [16] and DNA sensors [17]) and even with the ability of measuring complex biological receptors and cells [18]. Therefore, achieving an optimized sensor behavior in EISFETs usually requires the use of specific materials and device architectures.The ability to detect biomolecular interactions is of extreme importance in medical diagnostics. Nevertheless, it also often requires single-use disposable sensors that would be fabricated in high volumes and will require a very low unitary cost.

Much Brefeldin_A effort is being laid on nanowire-based FETs for biosensing. However, these nanowire-based devices suffer from very low manufacturing potential [19-21]. On the other hand, silicon microelectronic technology can provide a low cost manufacturing infrastructure for a high volume fabrication, but this requires the use of standard manufacturing process. Here we describe a standard CMOS manufacturing of an EISFET. The EISFET reported here comprises a thin conducting layer of 10 �C 30 nm Silicon-On-Insulator (SOI) which implies that the active silicon is fully depleted (FD) for the given silicon doping. It was already demonstrated that FD EISFETs present enhanced electrical performance in terms of increased sensitivity to surface potential variations [22,23].

This sensitive device holds the potential application in medical diagnostics for biomarker analysis.2.?Experimental2.1. Device Fabrication6�� Silicon-on-Insulator (SOI) wafers were used (SOITEC, Bernin, France). SOI layer and buried-oxide (BOX) thickness was 260 nm and 1,000 nm, respectively, while SOI resistivity was 13�C22 ��cm. Two types of devices were fabricated under the same process: FD EISFETs and metal-oxide-semiconductor FET (MOSFET) like devices that serve as test structures for process evaluation and electrical definition.